Project development

Partnership for 5 years with qualified investor in one direction of our business development. This direction is technology of fz silicon single crystals. Partner’ benefit is half year profits from sales in this direction

The element base and installation of components of the FZ1510 high-frequency generator have been optimized. Single crystals of silicon up to 102 mm in diameter have been grown. A mathematical model of the process and the design of an inductor have been developed for growing single cry

The basic design of the block for cleaning the electron beam from accompanying impurities has been developed. The sizes of some of the block elements are optimized based on the previously created mathematical model of the process. The control system of the growing process improved The

A set of work was carried out to improve the high-frequency generator FZ1510: water-cooled capacitors were installed instead of non-cooled ones, the design of external screens was improved and the protection of low-voltage lines from the magnetic field. Laboratory process of growing s

Work continues on making changes to the design of the electron-beam heater. A model of the construction of a product with a built-in gas-dynamic window has been developed. The first version of the working drawings was developed. The drawings were reviewed and sent for correction. In p

1. A model of the design of an electron-beam heater integrated with a gas-dynamic window (GDW) for the subsequent connection of the magnetic separation unit (MSU) has been created – the model is ready – the production of working drawings has begun. 2. Tenders were held to

In January – March 2020, work was carried out to improve the technology for growing monocrystals. Generator elements with low reliability were installed. Items ordered in China, received with a long delay – in March. The technological line for the implementation of auxilia

In accordance with the program “Technology Transfer Program” ID 1.2.1.2/16/I/001 for a voucher, the Latvian Investment and Development Agency (LIAA) completed the project “Determining the effect of technology on the lifetime of nonequilibrium charge carriers in the p

Stage 1. Development of technology for growing silicon single crystals with a diameter of 100 mm for use in low-power and powerful microelectronic solid-state devices. In October-December 2019, crystals with a diameter of 78 mm were grown from the initial rods with a diameter of 72 mm