- The element base and installation of components of the FZ1510 high-frequency generator have been optimized. Single crystals of silicon up to 102 mm in diameter have been grown.
- A mathematical model of the process and the design of an inductor have been developed for growing single crystals with a diameter from 5 mm (the process of growing a thin neck) to 100 mm from a pedestal with a diameter of 200 mm. The schematic diagram of the RF generator of the corresponding installation is unified with the optimized generator circuit of the FZ1510.
- The processes of heat treatment of neutron-doped silicon have been successfully carried out.
- A positive conclusion on the quality of dislocation-free silicon monocrystals grown on the FZ1510 installation from standard polycrystalline silicon was received from the consumer of the product.
- The work continues in accordance with the project plan.
project Nr. 4.5 “Technological research and production of silicon with a diameter of up to 100 mm for use in power rectfiers”
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