project Nr. 4.5 “Technological research and production of silicon with a diameter of up to 100 mm for use in power rectfiers”"

Stage 1. Development of technology for growing silicon single crystals with a diameter of 100 mm for use in low-power and powerful microelectronic solid-state devices. In October-December 2019, crystals with a diameter of 78 mm were grown from the initial rods with a diameter of 72 mm. the technology is ready for industrial use. A melting inductor was developed for processing the initial rods with a diameter of 100 mm. Single crystals with a diameter of 65-66 mm were grown from the initial rods with a diameter of 102-103 mm. the technology is ready for industrial use. When growing silicon single crystals with a diameter of 85-92 mm from the individual rods with a diameter of 102-103 mm, individual single crystals were obtained, but basically the processes end abnormally. The work is ongoing. Work is underway on the integrated installation of the pilot line necessary for the implementation of the project.