About us

We actively and successfully develop silicon technologies since the late 1970s. Our research in technologies of float zone (FZ) melting (high-frequency heating 2MHz ) and growth of silicon from melt by the Czochralski method yielded in more than 20 certificates of authorship (analog of patent), and in a similar number of articles and reports.

The rapid growth of solar technology in the mid- 2000s made ​​us to address the problems of obtaining not only defect-free crystals, but also high quality raw materials. One of the most important goals for us has always been the availability of raw materials, both in terms of quantity and in terms of prices.

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Basis of technology developed in 2009-2010 is protected by patents of the Russian Federation, which describe the essence of the developed process. The novelty and value of the work performed were evaluated in 2011 by assigning diploma "100 best inventions of Russia" to one of the patents

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